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InGaAs is a promising channel material for high performance CMOS logic circuits due to its large electron injection velocity. InGaAs Gate-All-Around (GAA) MOSFETs have been demonstrated; these transistors offer large drive current and excellent immunity to short channel effects (SCE). However, the characterization and reliability of InGaAs GAA MOSFETs are still challenging. In this paper, we (i) discuss...
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