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Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3 gate dielectrics were studied after RTA from 650 to 850??C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively...
A 0.9 V to 5 V (0.9/1.2/1.8/2.5/3.5/5 V) mixed-voltage I/O buffer with NMOS clamping technique is proposed. By using a dynamic gate bias generator to provide appropriate gate drive voltages for the output stage, the I/O buffer can transmit 3 times VDD voltage level signal without gate-oxide overstress hazard. Besides, the leakage current effect is eliminated by adopting a floating N-well circuit....
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