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AlGaN/GaN MOS-HEMTs on a silicon platform were realized using a CMOS-compatible gold-free process. Process modules commonly used in CMOS were used, including gate stack formation, etching modules, etc. Ron of 3 mΩ.cm2 was obtained. Breakdown voltage VBR of 800 V was achieved, the highest for LGD below 10 µm for AlGaN/GaN/Si MOS-HEMTs fabricated using a gold-free process. The devices could be generally...
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