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We investigate the impact of AlN buffer layers on metal gate work function (WF) of TiN metal inserted polysilicon stacks on silicon dioxide (SiO2) and high-k gadolinium silicate (GdSiO). Atomic layer deposition (ALD) technique is used to achieve atomic control of the buffer layer thickness. High WF of 5.2 eV suitable for p-MOSFETs are obtained by ALD AlN buffer layers and the principles of dipole...
The modified Schottky barrier (MSB) MOSFET with low-resistance metal source/drain and good short-channel effect immunity is one of the promising nanoscale device structures. In this letter, a modified external load resistance method was proposed to extract the bias-dependent source injection resistance of the MSB MOSFET for the first time. The effect of the thermal budget of the MSB process on the...
Current transport mechanisms of Schottky barrier (SB) and modified Schottky barrier (MSB) MOSFETs are investigated by measuring the temperature effect on current-voltage characteristics. For SB MOSFETs, current transport could be dominated by thermionic emission or tunneling mechanism depends on the Schottky barrier height and the gate voltage. The current transport of the MSB MOSFETs changes from...
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