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There are several key factors that determine the performance of a microwave compact range, one of the most important factors is the scattering of the walls. In order to reduce the scattering absorbers are applied, but it is not possible to eliminate the scattering entirely. Some parts of the walls that contribute more noise in the quiet zone than the other parts, these scattering hotspots need to...
This paper deals with the problem of RCS prediction of body with coatings using the method of Physical Optics (PO). In order to shorten the calculation time, this paper uses parallel computation mechanism which is based on MPI. The results show that it can effectively improve the calculation efficiency.
We demonstrate key factors enabling mobility improvement at both low charge density and high density (>5 × 1012/cm2) in In0.7Ga0.3As quantum-well MOSFETs. We further show sub-threshold swing (SS) and on-current (Id) improvement in tunneling FETs (TFETs). By reducing EOT, optimizing the top-barrier/high-κ interface, and confining carriers in In0.7Ga0.3As channel using In0.52Al0.48As bottom-barrier,...
The performance and reliability of ZrO2/In0.53Ga0.47As MOSFETs are shown to be improved by simultaneous reduction of dielectric and interface charges. An amorphous (La)AlOx interlayer at the ZrO2/In0.53Ga0.47As interface is a key to reduce border traps, interface traps and move ZrO2 fixed charge away from the In0.53Ga0.47As. Border traps are reduced ~3x, effective fixed charges are reduced ~3x and...
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