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We investigate the electrical control of the spin–orbit (SO) interaction in GaAs wells, involving both one- and two-subband electron occupations altered by a gate potential Vg, over a wide range of well widths w's. Through the self-consistent Schrödinger–Poisson calculation, we determine all the intrasubband Rashba αν (ν=1,2) and Dresselhaus βν, and also the intersubband Rashba η and Dresselhaus Γ...
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