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GeTe is a very promising thermoelectric material, but the presence of massive intrinsic Ge vacancies leads to an overhigh hole concentration and poor thermal stability. Counter doping is commonly employed to reduce the hole concentration, which, however, unavoidably deteriorates the carrier mobility. Here, it is found that the intrinsic hole concentration in the rhombohedral phase is much lower than...
The recently developed defective 19‐electron half‐Heusler (HH) compounds, represented by Nb1−δCoSb, possess massive intrinsic vacancies at the cation site and thus intrinsically low lattice thermal conductivity that is desirable for thermoelectric (TE) applications. Yet the TE performance of defective HHs with a maximum figure of merit (zT) <1.0 is still inferior to that of the conventional 18‐electron...
Inorganic semiconductors with superior plasticity are highly desired in current flexible electronics, which however are rarely discovered owing to their intrinsic covalent and ionic bonds. The Ag2Te0.6S0.4 semiconductor with an amorphous phase has recently been reported to exhibit plastic deformability. In this study, the reversible brittle‐plastic transition is found in this inorganic semiconductor,...