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Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm, SS = 52 mV/dec, hysteresis free (threshold voltage shift = 0.8 mV), and 0.65 nm CET (capacitance equivalent thickness). The NC-FinFET modeling is validated on standard 14nm FinFET. The transient behavior of gate and drain current response are exhibited with triangular gate voltage...
Path planning with obstacles avoidance in dynamic environments is a crucial issue in robotics. Numerous approaches have been suggested for the navigation of mobile robots with moving obstacles. In this paper, about 50 articles have been reviewed and briefly described to offer an outline of the research progress in motion planning of mobile robot approaches in dynamic environments for the last five...
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