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This paper reports a single-chip full-band 3.1 10.6GHz ESD UWB LNA featuring cascode shunt-series feedback topology and very robust whole-chip ESD protection. Careful ESD+LNA co-design was excised to achieve full-chip circuit optimization with high ESD protection. This design is implemented in a foundry 0.18μm RFCMOS process. Measurement shows the highest reported ESD protection of 8.25kV, a peak...
A 3.1-4.8GHz two-stage LNA for Group-1 UWB applications featuring current reuse, resistive feedback, complete and high ESD protection design is reported. ESD-RFIC co-design technique was used to ensure whole-chip optimization. The design is implemented in a foundry 0.18μm RFCMOS. Measurement shows a gain of 13.2dB/14.0dB, excellent input reflection of -13.4dB/-17.5dB, noise figure (NF) of 5.11dB/4...
Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (fT) of more than 250 GHz and power gain cut-off frequency (fmax) of 500 GHz. Outline designs...
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