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Planar metal-semiconductor-metal light-emitting diodes with InGaN/GaN multi-quantum-wells (MQWs) as the active layer have been demonstrated for the first time. The diodes with interdigitated Schottky electrodes fabricated on p-GaN contact layer exhibit symmetrical current-voltage characteristic with a turn-on voltage of ~ 13 V at 20 mA. The violet light emission centred at 408 nm is generated by radiative...
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