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This report presents a simple and efficient method of layer thinning and p‐type doping of WSe2 with vapor XeF2. With this approach, the surface roughness of thinned WSe2 can be controlled to below 0.7 nm at an etched depth of 100 nm. By selecting appropriate vapor XeF2 exposure times, 23‐layer and 109‐layer WSe2 can be thinned down to monolayer and bilayer, respectively. In addition, the etching rate...
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