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A novel amorphous silicon temporary bonding and corresponding laser assisted de-bonding technology are investigated for the improvement of 3D integration. Excellent bonding results with real device wafer with α-IGZO thin-film transistor are shown at the bonding temperature of 210°C, as well as outstanding performances for bonding strength, thermal stability, reliability and chemical resistance...
We addressed the interface problem of a good p-layer contact with boron doped zinc oxide as Transparent Conducting Oxides (TCO). The p-type microcrystalline Silicon (p-μc-Si:H) layer was performed by plasma-enhanced chemical vapor deposition (PECVD) technique as an interface layer between TCO and p-i-n amorphous Si solar cells. The presence of a thin p-type μc-Si:H between ZnO:B and p-a-SiC:H plays...
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