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We demonstrate InAs/InGaAs quantum-dot surface emitting distributed feedback (SE-DFB) lasers, using an indium–tin-oxide layer as top cladding, which eliminates the regrowth process used in conventional DFB lasers to greatly simplify laser process. The lasing peak near 1.30 $\mu \text{m}$ realized using the grating period of 375 nm exhibited a 0.13-nm linewidth and a low-temperature red-shift rate...
Light trapping, i.e. increasing the path length of incoming light, plays a decisive role for photovoltaic device performance for thin film silicon solar cells. This paper discusses way to demonstrate a bi-layer structure with high haze by using all dry process. Al doped ZnO (AZO:Al) film was continuously deposited on ITO precursor by pulse direct current magnetron sputtering. The various deposition...
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