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Well-ordered, one-dimensional silver-doped anatase TiO2 nanowire (AgNW) arrays have been prepared through a hydrothermal growth process on the sputtering-deposited AgTi layers. Electron microscope analyses reveal that the as-synthesized AgNW arrays exhibit a single crystalline phase with highly uniform morphologies, diameters ranging from 85 to 95nm, and lengths of about 11μm. Silver is found to be...
Silicon-based nanowire CMOS with the core-shell structure has not only excellent short-channel effect and enhanced conductance capability due to reduced scattering effect and unique low-dimensional structure, but also is compatible with the traditional CMOS processing, thus, it may be the promise one among the bulk MOSFET alternatives to extend CMOS integrated circuit into 10nm generation beyond....
In this paper, a nanowire tunnel field-effect transistor with dynamic threshold operation architecture (DT-NTFET) is proposed and the numerical study on its characteristics is presented. It shows that, in DT operation, the DT-NTFET can choose the threshold voltage (VT) flexibly by changing the adjust gate voltage, thus it can be applied as a multifunctional device in the future circuit design; in...
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