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In this letter, we report 4H-SiC RF bipolar junction transistors (BJTs) on an n-type 4H-SiC conductive substrate with, for the first time, RF power amplification at 1 GHz. The devices were fabricated using a double-mesa etch and interdigitated emitter-base finger design. When tested under common-base and pulsed Class AB mode at 1 GHz, the packaged devices with external matching exhibited a 10.1-dB...
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