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The development and assessment of ArF technology in a 200mm FAB line are described. Wafer-level measurement is implemented to explore the dummy pattern effect on cross-wafer uniformity and examine fundamental Si photonics devices.
An ultra-compact broadband TE-pass polarizer was demonstrated on SOI platform using horizontal nanoplasmonic slot waveguide. With 1μm device length, we achieved greater than 15dB polarization extinction ratio over 80nm bandwidth. The insertion loss was ~2dB.
This letter presents a novel complementary metal–oxide–semiconductor (CMOS)-compatible technique to fabricate a sub-100-nm slot waveguide in wafer-scale, which is beyond the resolution limit of conventional deep ultraviolet (DUV) lithography. We also demonstrate fabrication of an efficient channel-slot coupler with an ultrasharp tip by using slanted cutting.<?Pub _bookmark Command="[Quick...
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