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Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post‐silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom‐thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p‐ and n‐type semiconductors is essential for various device applications, such as complementary...
In article number 1903613, Hiroki Ago and co‐workers demonstrate the chemical‐doping‐induced conversion of ambipolar WSe2 monolayers to p‐ and n‐type semiconductors. The chemical doping not only allows control over the main carriers, but also significantly increases the carrier mobility. By integrating the chemically doped WSe2, a CMOS inverter and an in‐plane p–n junction with superior performance...
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