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Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by efficient modulation of surface potential in transistors. While negative‐capacitance transition is reported in polycrystalline Pb(Zr0.2Ti0.8)O3 (PZT) and HfZrO2 (HZO) thin‐films in few microseconds timescale, low SS is not persistent over a wide range of drain current when used instead of conventional dielectrics...
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