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In this paper the array and peripheral structured pure tin solder bump with electroless Ni-P UBM (under bump metallization) as barrier layer was fabricated on 4 inch wafer. The solder uniformity at wafer level was good after reflow. The effect of different reflow temperature on solder shear strength was studied and the bump failure mode and the interfacial reaction between tin bump and Ni-P UBM layers...
Sub 100 micron lead-free solder bumping and its related interconnection & reliability is becoming one of the important issues in today's electronic packaging industry. In this paper, a SnAg solder bumping area-array of 13 times 13 with the bump size less than 100mum on the TiW/Cu UBM was investigated. Bumps with smooth and shiny surface of 70mum in the height 90mum in the diameter were fabricated...
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