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The GaN‐based LEDs external quantum efficiency (EQE) is significantly improved by using the patterned sapphire substrate (PSS) technique. The enhancements in the light extraction efficiency (LEE) and the internal quantum efficiency (IQE) were evaluated based on a rate equation analysis of EQE versus the square root of the light‐output power (EQE‐√P) curves. The estimated enhancement in the LEE was...
A simulation model for light extraction efficiency (LEE) was proposed, considering the real structure of GaN_based light emitting diodes and absorption of GaN, electrodes and encapsulation materials, as well as the difference between TE and TM modes, the effects of active layer reabsoption and photo recycling. The slope angle and the depth of the pattern were optimized for patterned sapphire substrates...
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