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The combination of high‐quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2 V−1 s−1 (337 cm2 V−1 s−1) is reached at room temperature (low temperature)...
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