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By combining a high‐κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room‐temperature mobility of ≈150 cm2 V−1 s−1 and room‐temperature phonon‐limited transport in a monolayer MoS2 transistor for the first time.
On page 547, charged impurities in monolayer MoS2 are effectively screened by combining a high‐κ dielectric substrate and a high density of carriers, leading to an unprecedented room‐temperature electron mobility of ≈150 cm2 V−1 s−1. Y. Shi, G. Zhang, X. Wang and co‐workers also demonstrate phonon‐limited transport in monolayer MoS2 for the first time, an important milestone for electronic device...
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