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Graphene nanoribbons (GNRs) with widths of a few nanometers are promising candidates for future nanoelectronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometer‐long GNRs on insulating substrates, which is essential for the fabrication of nanoelectronic devices, remains an immense challenge. Here,...
Recently, graphene nanoribbons (GNRs) on hexagonal boron nitride (h‐BN) substrates have been studied to develop high‐mobility devices or devices based on a 1D Moiré superlattice. For this purpose, a device‐level understanding of the charge‐puddle landscape of a GNR/h‐BN structure is needed when the charge puddles function as scattering sources for mobile charge carriers. Here, a puddle landscape...
We report the etching of and electronic transport in nanoribbons of graphene sandwiched between atomically flat hexagonal boron nitride (h-BN). The etching of ribbons of varying width was achieved with a focused beam of 30 keV He+ ions. Using in-situ electrical measurements, we established a critical dose of 7000 ions nm−2 for creating a 10 nm wide insulating barrier between a nanoribbon and the rest...
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