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As UV LED technology advances, more and more new applications emerge. This paper describes design, fabrication and packaging of a vertical-structured UV LED device. Laser lift-off (LLO) method is used in the fabrication of a 45mil × 45mil LED, which allows us to remove the Sapphire substrate and absorptive GaN layers in the epitaxy. By doing this, the UV light absorption within the epitaxy is minimized...
Epitaxial integration of GaN on silicon is widely deemed as one of the most effective approaches for a significant cost reduction of solid state lighting, but was hindered by the crack problem due to the huge mismatch in the coefficient of thermal expansion (CTE) between GaN and Si. The stress compensation scheme with an AlN/AlGaN multilayer buffer has been experimentally verified with a great reproducibility...
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