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As an emerging 2D layered material, Bi2O2Se has shown great potential for applications in thermoelectric and electronics, due to its high carrier mobility, near‐ideal subthreshold swing, and high air‐stability. Although Bi2O2Se has a suitable band gap for infrared (IR) applications, its photoresponse properties have not been investigated. Here, high‐quality ultrathin Bi2O2Se sheets are synthesized...
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