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We successfully fabricated the fully transparent Al–Sn–Zn–O thin-film transistors (ATZO TFTs) on glass by RF magnetron sputtering, and then the electrical performances of the ATZO TFTs are optimized with double-channel structures. The double-channel structures are formed by using bilayer ATZO films fabricated successively with different oxygen partial pressure in the sputtering process. The operation...
Bottom gate, top contact thin-film transistors (TFTs) with transparent Sn-doped zinc oxide as the active layer have been fabricated on glass substrate at room temperature. Indium tin oxide, alumni zinc oxide (AZO) and Al thin films serve as the source/drain (S/D) electrode. It turns out that devices with AZO S/D electrodes exhibit preferable properties such as a saturation mobility of 13.6 cm2/Vs,...
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