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Zinc oxide is a well-known wide band gap semiconductor material which can be applied to thin film transistors. Al-doped ZnO (AZO) has a better electrical conductivity than Zinc oxide at the same time with good photoelectric properties. In this paper, the method of atomic layer deposition (ALD) was used to prepare the ZnO and Al:ZnO (AZO) thin films as the active layers on silicon substrates at 100...
As a basic block of carbon materials with different dimensions, graphene has shown great potential in novel device field. As a result, it becomes extremely important to break the zero-band-gap status of graphene sheet. In this work, the density functional theory (DFT) has been carried out to calculate the electronic structure of La-doped monolayer graphene under both X-direction uniaxial and Y-direction...
In the developed trend of high efficiency and high density power, LLC resonant converter has become a research focus. This paper analyzes the working principle of LLC resonant circuit and synchronous rectification scheme with secondary current Self-driven type and to design and verify the circuit based on the chip UCC25600. The results show that the LLC resonant converter has advantages of high converting...
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