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In this paper the influence of adding ELD barrier and capping layers in die shear strength of 3D stacked chips is discussed. Electroless NiB is used as barrier layer to prevent solder or UBM consumption and immersion Au is used as capping layer to improve the solder wettability. In this study UBM layers are Cu, Co and Ni and pure Sn is used as solder. For bonding both reflow and TCB methods are employed...
Room temperature and pressure bonding is shown for wafer-to-wafer (W2W) bonding but never for small chips. Usually, thermo-compression bonding (TCB) is employed for die-to-die (D2D) and die-to-wafer (D2W) bonding for 3D and MEMS application. TCB process is itself limited by tool capability and requires pressure and temperature for bonding which is not only time consuming but can induce coefficient...
3-D stacking with vertical interconnection of thinned microelectronic silicon chips is a novel approach to achieve the enhanced performance, higher density, and smaller size of integrated circuits with a better multifunctionality than the traditional 2-D chip packaging. To achieve this, high alignment accuracy is required between the top chip and the bottom substrate along with good bonding between...
For satisfying the current industrial need of downscaling electronic devices, the die-to-die or die-to-package interconnects need to decrease in size accordingly. In view of that, flip chip bumps, which are currently the smallest interconnect type, have to be further miniaturized. In this study, Cu-Sn-Cu TLP (Transient Liquid Phase) bonded bumps that consist entirely of intermetallics (IMC) are studied...
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