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In this paper, we present significant reductions of optical losses and contact resistances in AgGe-based ohmic contacts to InP membranes. Due to the high solubility of Si in InGaAs and InGaAsP, heavily doped n-type contact layers are grown on InP wafers. This high doping concentration gives rise to annealing-free ohmic contacts and low contact resistances at the level of $10^{-7}\ \Omega\ \textrm{cm}^{2}$...
All-optical modulation is demonstrated in low loss germanium-on-silicon waveguides at mid-infrared wavelengths. The results indicate the suitability of this platform for optical signal processing in this long wavelength regime.
In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-on-insulator waveguide circuits up to 3.8 μm wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5–5 μm wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors...
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