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Pulse stress tests on magnetic tunnel junctions (MTJs) with a MgO barrier (~5.5 Aring) were conducted. Both the E (McPherson and Mogul, 1998) and 1/E (Chen and Holland, 1985; Schuegraf and Hu, 1994) models can describe the intrinsic breakdown behavior of this ultrathin barrier within the range of voltages studied. While constant voltage stress (CVS) and ramped voltage pulse stress (RVPS) testing yield...
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