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The SiN‐passivated AlGaN/GaN high electron mobility transistors were investigated by 1MeV neutron irradiation at fluences up to 1015 cm‐2, yielding a significant degradation for the transconductance near the knee voltage and the reverse gate leakage current at fluences ranging from 1014 to 1015 cm‐2 which could be attributed to the irradiation induced mobility shift and the defects in SiN passivation...
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