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Single crystalline β-(AlGa)2O3 epilayer was grown on β-Ga2O3 (010) substrate using pulsed laser deposition. By high resolution X-ray diffraction and X-ray photoelectron spectroscopy measurements, the Al composition was determined to be 11%–13%, somewhat larger than that of target. In addition, Schottky diodes were fabricated on epitaxial β-(Al0.11Ga0.89)2O3 film using Ni/Au as the anode contacts and...
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