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Vacancy-type defects in gas cluster ion-implanted Si were probed by monoenergetic positron beams. The acceleration energy of Ar-ion clusters ranged between 20 – 60 keV, and the mean cluster size was 2×103 atoms. Doppler broadening spectra of the annihilation radiation were measured, and the vacancy-rich region was found to localize at a depth of 0 – 13 nm. Two different defect species were found to...
Highly oriented graphite materials were modified by the introduction of foreign species, i.e. doped by iron and implanted by energetic ions. On irradiated surfaces, hillocks were observed and assessed using STM. An increase in atomic weight of the implanted energetic ions led to an increase in area of the damaged surface of graphite and a low RRR value indicated a high density of hillocks in iron-doped...
A method of using shallow junctions and a low substrate doping concentration in 0.1- to 0.2-/spl mu/m MOSFETs has been developed. An Sb /spl delta/-doping technique is used to form extremely shallow (x/sub j/<20 nm) junctions. A 0.17-/spl mu/m n-MOSFET can be operated with a peak substrate-doping concentration of 1/spl times/10/sup 17/ cm/sup -3/. This approach reduces the junction capacitance,...
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