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We report the results of our study on the impact of variable atomic ratio of GexSe1-x on the total ionization dose (TID) influenced lateral diffusion of Ag into chalcogenide glasses (ChG) in flexible radiation detection sensors.
We demonstrate how the radiation response and performance of Ag-chalcogenide glass radiation sensors fabricated on a flexible substrate can be optimized by modifications of spacing between electrodes.
Resistive random access memory is one of the most promising non-volatile alternatives to current technologies, such as Flash, due to its simple sandwiched structure, low power consumption, high speed and good endurance1,2. In many cases, the mechanism of resistive switching is believed to be the formation and partial dissolution of nanoscale conductive filaments (CFs) during the set and reset process...
The failure ratios of the three typical time-dependent dielectric breakdown (TDDB) failure modes, including top interface, sidewall and bottom corner areas, have been identified for a direct polishing ultra low k (ULK) dielectric Cu back-end-of-line (BEOL) structure at 40nm node. The Cu surface roughness of the metal lines, and the adhesion and thickness of the metal capping layers are strongly correlated...
Ca(Mg1/3Nb2/3)O3/CaTiO3 (CMN/CT) heterostructure dielectric thin films, with the same thickness but different arrangement patterns, were prepared by Pechini method. The effects of the heterogeneous interface on the structure and properties have been studied. The results showed that, in non-alternating arrangement films, single perovskite phase can only be obtained in TM heterostructure film, in which...
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