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We have investigated the ionic-liquid-gating effect on electric conduction in (La0.8Sr0.2)MnO3(LSMO) thin films. The gating effect is significant for the LSMO thin films grown at low oxygen partial pressures. We observed that the channel resistance of LSMO was altered only for a positive gating voltage, not for a negative one, mainly through the changes of mobility rather than the carrier density...
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