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In this study, intrinsic a-SiO:H films were prepared by a conventional radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of SiH4, H2 and CO2. Changes in the optical, electrical and structural properties of the a-SiO:H films were investigated systematically by controlling the deposition parameters, mainly the gas ratio of CO2 to SiH4, and hydrogen dilution...
The n-type hydrogenated microcrystalline silicon-incorporated silicon oxide (n-μc-SiO:H) films are prepared by 13.56 MHz plasma enhanced chemical vapor deposition (rf-PECVD) using SiH4, H2 and CO2 gases for an inter-layer between the amorphous silicon (a-Si:H) top-cell and the microcrystalline silicon (μc-Si:H) bottom-cell in the thin-film silicon tandem solar cells. The optical and electrical properties...
This study addresses the role of p-type buffer layers between ZnO:Al (AZO) TCO and p a-SiC:H window layer. When AZO is used as a front TCO in conventional a-Si:H solar cells incorporating p a-SiC:H window, the fill factor (FF) significantly decreases in different with SnO2:F (FTO). Various buffer layers with different conductivity and crystalline properties are inserted between AZO and p a-SiC:H and...
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