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Atomic layer deposition (ALD) is proposed to synthesize ZnS-coated g-C3N4 photocatalysts which form an effective heterojunction for charge separation by reducing carrier recombination. It also, enables decrease in processing time from few days to several hours and circumvents collection process of synthesized powder which leads improvement in the productivity. In ZnS/g-C3N4 heterojunction composite,...
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