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A highly linear HBT power amplifier (PA) for LTE-A small-cell base-stations is presented. By separating a bias point of the PA sub-cells and combining these outputs with out-of phasing, the third-order intermodulation distortion (IMD) can be reduced. By the simulation results, the third-order IMDs are approximately −50 dBc and −43 dBc with and without the separate biasing at an output power of 29...
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