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In this paper, we review our progress on carrier-depletion-based silicon modulator. The lateral and the interdigitated PN junctions are optimized and then compared systematically. The comparison helps us to choose a proper doping pattern for 40 Gbit/s modulation with MZ structure and travelling wave electrode. Ring modulators with both doping patterns are able to work at 10 Gbit/s with 0.5 Vpp driving...
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