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The innate inverse Auger effect within bulk silicon can result in multiple carrier generation. Observation of this effect is reliant upon low high‐energy photon reflectance and high‐quality surface passivation. In the photovoltaics industry, metal‐assisted chemical etching (MACE) to afford black silicon (b‐Si) can provide a low high‐energy photon reflectance. However, an industrially feasible and...
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