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The fast bit cell current (BCC) reduction in a one-time programming (OTP) device during high-temperature annealing will severely decrease the data retention (DR) capability. It is found that negative bias temperature instability-like degradation is responsible for this fast BCC shift, which is different from the well-known DR mechanism. The rapid floating gate charge diminution at the initial stage...
A novel omega-shaped-gated (Ω-Gate) poly-Si thin-film transistor (TFT) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory devices fabricated by utilizing a simple process sequence are proposed for the first time. The Ω-Gate structure inherently covered two sharp corners constructed simply by a sidewall spacer formation. Due to the sharp corner geometry, the local electric fields across...
A novel gate-all-around low-temperature poly-Si (LTPS) thin-film transistor (TFT) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory with field-enhanced nanowire (FEN) structure has been proposed to improve the program and erase (P/E) performance. Each nanowire inherently had three sharp corners fabricated simply by sidewall spacer formation to obtain high local electric fields. The field-enhanced...
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