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In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented...
In this paper, we have simulated how the overshoot current in the Resistive-switching Random Access Memory (RRAM) cell is generated and whether the integrated transistor can effectively suppress the overshoot current that can cause degradation of cell endurance. We propose a CMOS-friendly 1T1R fabrication process and proceed with circuit simulation using the process parameters. The simulation shows...
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