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We report microphotoluminescence studies of GaN/AlN quantum dots grown along the (0001) crystal axis by molecular‐beam epitaxy on sapphire substrates. To obtain quantum dots with different density and size a nominal GaN coverage was varied from 1 to 4 monolayers. The highest density of quantum dots was about 1011 cm‐2, so about 103 quantum dots was excited in experiments. We found that the photoluminescence...
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