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A low-voltage laser-thyristor heterostructure based on AlGaAs/GaAs with InGaAs QW has been fabricated in order to have a compact source of high-power laser pulses at 900nm wavelength. It has been shown experimentally that the lightly-doped base thickness increase up to 4 μm allows increasing a blocking voltage maximal value up to 25 V. Maximal peak powers of 55 W and 8 W have been attained at laser...
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