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Ni films of thickness ranging from 150 to 250 nm were deposited by DC magnetron sputtering on to Si (100) substrates maintained at room temperature and followed by post-annealing at 300 and 500 °C for 30 min. Other set of Ni films were deposited on to Si (1 0 0) substrates held at annealing temperature of 300 and 500 °C for 30 min. Microstructural investigation by field emission scanning electron...
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