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A distributed low-noise amplifier (LNA) employing novel transmission lines and inductors was designed in a standard 0.18-μm CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8 ± 0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05 × 0.37 mm2 chip...
A single-chip broadband CMOS receiver front-end, integrating a low-noise amplifier (LNA), a correlator and a template pulse generator, was investigated in non-sinusoidal time-domain environment for possible use as a carrierless ultra-wideband (UWB) receiver front-end. Particularly, the CMOS LNA and the multiplier making up the core component of the correlator were designed, fabricated and tested to...
A new receiver front-end operating over the 3.1-4.8 and 6.3-7.9 GHz dual-band in the ultra-wideband (UWB) spectrum (3.1-10.6 GHz) was developed using a 0.18-μm CMOS process. The receiver front-end has a chip size of only 1.18 × 0.87 mm2 and exhibits conversion gains of 12.5-16.5 dB and 14.5-16 dB over the 3.1-4.8 GHz and 6.3-7.9 GHz bands, respectively. The measured input 1-dB compression points are...
A new ultra-wideband 0.18-μm CMOS sampling receiver frontend was developed. It includes a low-noise amplifier (LNA) and a sampler and achieves high gain, fast sampling, low noise figure, low power consumption, and enhanced RF-power efficiency. The LNA and sample-and-hold capacitor are switched using two synchronized strobes generated on-chip. Measured results show performance of 9 to 12 dB voltage...
An ultra-wideband (UWB) distributed amplifier implementing high-gain, low-power-consumption gain-cells is presented. The distributed amplifier was fabricated in TSMC 0.18-mum CMOS process and achieved an average power gain of around 10 dB, input return loss of less than -20 dB, and noise figure of 3.3-6.1 dB with a power consumption of only 19.6 mW over the entire UWB range of 3.1-10.6 GHz. In the...
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