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Performance evaluation of low-voltage silicon and GaN power FETs is presented for chip-scale DC-DC power converter applications. The circuit calculations are based on an improved circuit model for the FET with accurate description of terminal capacitances and on-resistance. It is shown that GaN power FETs combined with silicon MOS power diodes can potentially lead to nearly 82% power conversion efficiency...
Detailed performance evaluation of silicon and GaN power FETs is presented for chip-scale DC/DC converter applications. It is shown that improved GaN power FETs and silicon MOS power diodes can potentially lead to nearly 90% power conversion efficiency when switched at 5 MHz in a synchronous buck converter topology.
This paper presents the design and optimisation of high quality (Q) factor inductors using Micro/Nano Electro-Mechanical Systems (NEMS/MEMS) technology for 10 GHz to 20 GHz frequency band. Three inductors have been designed with rectangular, circular and symmetric topologies. Comparison has been made amongst the three to determine the best Q-factor. Inductors are designed on Silicon-on-Sapphire (SOS)...
We demonstrate electrically functional 0.099 μm2 6T-SRAM cells using full-field EUV lithography for contact and M1 levels. This enables formation of dense arrays without requiring any OPC/RET, while exhibiting substantial process latitudes & potential lower cost of ownership (single-patterning). Key enablers include: 1) high-k/metal gate FinFETs with Lg˜40 nm, 12-17 nm wide Fins, and cell β ratio...
This paper presents the design and implementation of a fully on-chip wideband LNA using 0.25-micron silicon-on-sapphire (SOS) technology for the next-generation radio telescope application, the square kilometre array (SKA), which demands ultra low noise and wideband operation. The proposed LNA design employs a cascaded inductive degeneration architecture with intermediate LC architecture, resulting...
This paper presents the design of a voltage controlled oscillator (VCO) for multi-standard wireless receiver covering global standards for mobile (GSM), digital communication systems (DCS), personal communication systems (PCS), and universal mobile telecommunication system (UMTS) standards. An effective frequency planning scheme that requires the VCO to tune from 3.2 GHz to 4.1 GHz and generate multiple...
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