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The vehicle parking system is designed to prevent usual problems associated with the parking. This system is designed to solve the problem of locating empty parking slot, congestion and indiscriminate parking. The system has been designed using VHDL and successfully implemented on CPLD (family-MAX V,Device-5M1270ZT144C5, Board-Krypton v1.2). A complete design and layout was drawn out and suitably...
Detailed performance evaluation of silicon and GaN power FETs is presented for chip-scale DC/DC converter applications. It is shown that improved GaN power FETs and silicon MOS power diodes can potentially lead to nearly 90% power conversion efficiency when switched at 5 MHz in a synchronous buck converter topology.
We demonstrate electrically functional 0.099 μm2 6T-SRAM cells using full-field EUV lithography for contact and M1 levels. This enables formation of dense arrays without requiring any OPC/RET, while exhibiting substantial process latitudes & potential lower cost of ownership (single-patterning). Key enablers include: 1) high-k/metal gate FinFETs with Lg˜40 nm, 12-17 nm wide Fins, and cell β ratio...
This paper presents the design and implementation of a fully on-chip wideband LNA using 0.25-micron silicon-on-sapphire (SOS) technology for the next-generation radio telescope application, the square kilometre array (SKA), which demands ultra low noise and wideband operation. The proposed LNA design employs a cascaded inductive degeneration architecture with intermediate LC architecture, resulting...
We report on a major advancement in full-field EUV lithography technology. A single patterning approach for contact level by EUVL (NA=0.25) was used for the fabrication of electrically functional 0.186 mum2 6T-SRAMs, with W-filled contacts. Alignment to other 193 nm immersion litho levels shows very good overlay values les20 nm. Other key features of the process are: 1) use of high-k/Metal Gate FinFETs...
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