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The composition distribution of In0.16Al0.34As0.41Sb0.09 layers grown at different temperatures with applications in solar cells have been analysed by atom probe tomography. Our results clearly show non-random distributions in both In and Sb in layers grown at 325 °C and 475 °C. The composition fluctuations consist on smooth variations, with a statistically significant periodicity of 10 nm for In...
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