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The Indium Tin Oxide (ITO) film was deposited on the surface of Hg3In2Te6 (short for MIT) (110) for the fabrication of ITO/MIT(110) heterojunction by using the pulsed laser deposition method. In situ X-ray photoelectron spectroscopy was utilized to examine the band offsets and core level of ITO/MIT(110) heterojunctions. The result showed that the valence band maximum of ITO films and MIT(110) were...
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